Document Type

Article

Publication Title

Journal of Physics and Chemistry of Solids

Abstract

Tellurium has a unique helical crystal arrangement and pronounced anisotropy that influence its electronic and optical properties at the nanoscale. This study reports the synthesis of pure tellurium quantum dots (Te QDs) on silicon wafer using glancing angle deposition (GLAD). Quasi-hemispherical dots with lateral sizes ranging from 9 to 28 nm and vertical dimensions of 6 to 10 nm were produced as a function of the deposition duration. A comparison of the dot sizes with the Bohr radii of the charge carriers indicated a regime of strong to intermediate confinement. Structural analyses confirmed the polycrystalline nature and trigonal phase of QDs. Vibrational and optical characterizations revealed characteristic lattice modes and a tunable bandgap between 2.99 and 3.74 eV, which varies according to the dot size, confirming confinement effects. The growth mechanism was elucidated by applying Structure Zone Model and identifying the Volmer-Weber growth mode, which highlights the significance of shadowing effects, restricted adatom mobility, and anisotropic crystal structure in the development of isolated quantum-confined nanostructures. GLAD offers a surfactant-free route with precise control over the size of tellurium QDs, positioning these QDs for integration into optoelectronic devices and energy storage systems.

Department

School of Physical Sciences

Publication Date

10-2026

Download

Share

COinS