Date of Award

3-26-2015

Document Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

Department

Applied Science

First Advisor

Hye-Won Seo

Abstract

Wurtzite InxGa1-x N (0001) nanorods have been grown on Si (111) substrate by plasma-assisted molecular beam epitaxy (PA-MBE) methods without any heterocatalyst. The InxGa1-x N ( ~0.3 < x< ~ 0.4) is a unique material as high-brightness light emitting diodes (LEDs), laser diodes (LDs), which may emit/detect the green/blue light. However, the growth of the high quality of InxGa1-x N with a tunable bandgap, having a 30~40% of In content, is not formidable due to thermodynamic & kinetic limitations in the alloy formations. For instance, the miscibility gap induced phase separation and In segregation on the growth surface are the cases. In this dissertation, we will report the growth of high quality InxGa1-x N nanorods in relation to the growth parameters, substrate temperature, In/Ga ratio, group-III (In+Ga) flux, and Group V flux, with understanding the physics behind. Using in-situ reflection high-energy electron diffraction, the surface crystal structure was monitored. The morphological and optical properties of InxGa1-x N nanorods were characterized by scanning electron microscopy and dual-light room-temperature photoluminescence methods. In addition, the nitrogen species from plasma source, which contribute to the growth, was studied by measuring optical emission spectroscopy.

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